DocumentCode :
1088295
Title :
VIB-3 defect structure and electrical property modifications caused by reactive ion etching and ion beam etching
Author :
Fonash, Stephen J. ; Singh, Rajdeep ; Climent, August ; Rohatgi, Ajeet ; Caplan, P. ; Poindexter, E.
Volume :
30
Issue :
11
fYear :
1983
fDate :
11/1/1983 12:00:00 AM
Firstpage :
1613
Lastpage :
1614
Keywords :
Acceleration; Annealing; Bonding; Dry etching; Electric variables measurement; Identity-based encryption; Ion beams; Paramagnetic resonance; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21413
Filename :
1483314
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1088295
