New GaAs n+-p- delta (n+)-i- delta (p+)-i-n+ switching device grown by molecular beam epitaxy

A new GaAs switching device with an n⁺-p- delta (n⁺)-i- delta (p⁺)-i-n⁺ structure has been demonstrated. An interesting S-shaped negative differential resistance (NDR) is shown to occur that originates from the avalanche multiplications within the delta (n⁺)-i- delta (p⁺)-i sawtooth doped superlattice (SDS). The excellent NDR behaviour gives the studied structure good potential for switching device applications. Furthermore, with an adequate design, the studied structure can be applied to fabricate a new functional device.