Title :
(InAs)1/(GaAs)4 superlattice strained quantum well laser at 980 nm
Author :
Chand, Naresh ; Dutta, N.K. ; Chu, S.N.G. ; Lopata, J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The first successful MBE growth of (InAs)1/(GaAs)4 short-period superlattice (SPS) strained quantum well lasers emitting at approximately 980 nm is reported. The SPS consists of six periods of one and four monolayers of InAs and GaAs, respectively. The measured threshold current density was approximately 100 A cm-2 for 0.96 mm long lasers. Devices have operated up to 170 degrees C with a characteristic temperature T0 of 148 K. The (InAs)m/(GaAs)n superlattice is an ordered counterpart of the InGaAs random alloy, and provides an alternative method fabricating high speed electronic and photonic devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; 980 nm; III-V semiconductors; InAs-GaAs; MBE growth; characteristic temperature; short-period superlattice; strained quantum well lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911244
