DocumentCode :
1088707
Title :
The operation of power MOSFET in reverse mode
Author :
Chi, Min-Hwa ; Hu, Chenming
Author_Institution :
Exel Microelectronics, San Jose, CA
Volume :
30
Issue :
12
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
1825
Lastpage :
1828
Abstract :
Power MOSFET\´s may be used to obtain a low voltage drop in a rectifier circuit. This function will grow more important in future low voltage power supplies. In such a circuit, the MOSFET must operate in the "reverse mode," in the sense that the current flow is opposite to the conventional direction. This paper discusses the I-V characteristics of power MOS transistors in the reverse mode by extending the theory for device operation in the normal mode. Three regions of operation in the reverse mode are identified. Calculated I-V curves compare favorably with the measured curves of a commercial power MOSFET.
Keywords :
Forward contracts; Immune system; Laboratories; Low voltage; MOSFET circuits; P-n junctions; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21452
Filename :
1483353
Link To Document :
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