DocumentCode :
1088803
Title :
Beamwidth for asymmetric and multilayer semiconductor laser structures
Author :
Buus, Jens
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Volume :
17
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
732
Lastpage :
736
Abstract :
An expression for the far field of the fundamental TE0mode in an asymmetrical dielectric slab waveguide is derived. By using normalized waveguide parameters, universal plots of the beamwidth are presented. These plots include the obliquity factor correction. Experimental results for symmetrical GaInAsP lasers at wavelengths near 1.3 μm are compared with theoretical predictions by Buus and Adams. Calculated results for the 1.55 μm wavelength are presented. A numerical method for the calculation of the far field for structures where four or more layers must be included is outlined.
Keywords :
Gallium materials/lasers; Semiconductor lasers; Fiber lasers; Laser modes; Laser theory; Nonhomogeneous media; Optical waveguides; Refractive index; Semiconductor lasers; Semiconductor waveguides; Slabs; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071157
Filename :
1071157
Link To Document :
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