Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure

Author

Magari, Katsuaki ; Okamoto, Minoru ; Suzuki, Yasuhiro ; Sato, Kenji ; Noguchi, Yoshio ; Mikami, Osamu

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

30

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

695

Lastpage

702

Abstract

A new approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of a tensile-strained-barrier MQW structure that enhances TM mode gain. Polarization sensitivity below 0.5 dB is realized at a wavelength of 1.56 μm. A signal gain of 27.5 dB is obtained along with a saturation output power of 14 dBm. Deriving the refractive indices of well and barrier layers from both experiment and theory, we succeed in separation of the effect of the confinement factor and the gain coefficient. It is determined that TM mode gain enhancement in this structure is primarily due to the increase in the confinement factor

Keywords

laser modes; light polarisation; refractive index; semiconductor lasers; sensitivity; 1.56 mum; 27.6 dB; TM mode gain; TM mode gain enhancement; active layer; confinement factor; gain coefficient; polarization sensitivity; polarization-insensitive optical amplifier; refractive indices; saturation output power; semiconductor optical amplifier; signal gain; tensile-strained-barrier MQW structure; well layers; Gain; Optical amplifiers; Optical polarization; Optical refraction; Optical saturation; Optical sensors; Optical variables control; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.286156

Filename

286156