Title :
Experimental study of InGaAs transferred-electron device as fast laser driver
Author :
Hahn, D. ; Hansen, K. ; Schlachetzi, A.
Author_Institution :
Inst. fur Halbleitertech., Tech. Univ., Braunschweig, Germany
Abstract :
Investigations were made of a laser-driver circuit consisting of an InGaAs transferred-electron device (TED) and an InGaAsP DH-laser diode. A large signal modulation of the laser diode was achieved. Good agreement between the experimental switching behaviour of the circuit and the corresponding simulations was found. For TEDs of varying active lengths, the optical output signal of the laser follows the switching pulses generated by the TEDs from 2.5 ns to 500 ps. It was shown that the switching speed of this driver circuit is determined mainly by the transient behaviour of the laser diode.
Keywords :
Gunn devices; III-V semiconductors; driver circuits; gallium arsenide; gallium compounds; indium compounds; laser accessories; optical communication equipment; optical modulation; semiconductor junction lasers; 500 ps to 2.5 ns; DH-laser diode; InGaAs; InGaAsP; TED; fast laser driver; laser-driver circuit; signal modulation; switching speed; transferred-electron device; transient behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911283
