Band-to-band Auger recombination effect on InGaAsP laser threshold

Author

Sugimura, Akira

Author_Institution

Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan

Volume

17

Issue

5

fYear

1981

fDate

5/1/1981 12:00:00 AM

Firstpage

627

Lastpage

635

Abstract

The band-to-band Auger recombination effect on the threshold current in an InGaAsP laser is studied theoretically. An approximation method for the calculation is derived and the Auger lifetime is obtained numerically in the framework of the $k-p$ perturbation method for band structure calculation. Gain factor and radiative lifetime are calculated by using Stern\´s method, which involves the band tailing caused by injected carriers. Calculated carder lifetime, quantum efficiency, and threshold current density for the 1.27 μm InGaAsP laser agree well with reported experimental values. The calculated characteristic temperature T0and the break point temperature TBare compared with experimental values for InGaAsP lasers with a variety of compositions. The comparison shows that the Auger recombination is one of the dominant effects in determining the threshold current of InGaAsP lasers.

Keywords

Charge carrier processes; Gallium materials/lasers; Optical fiber transmitters; Fiber lasers; Indium phosphide; Laser modes; Laser theory; Laser transitions; Quantum well lasers; Radiative recombination; Semiconductor lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1981.1071190

Filename

1071190