DocumentCode :
1089185
Title :
Hydrogen-sensitive silicon tunnel MIS switching diodes
Author :
Kawamura, K. ; Yamamoto, T.
Author_Institution :
Shizuoka University, Johoku, Hamamatsu, Japan
Volume :
4
Issue :
4
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
88
Lastpage :
89
Abstract :
Palladium thin SiO2-n-p+silicon switching diodes have been fabricated in which the turn-on voltage changes in proportion to the hydrogen concentration in the ambient gas. In the typical diode operated at 100°C, the switching voltage decreases from 5.1 to 3.6 V for 10 ppm hydrogen in air within 2 min and the off-state disappears for 100 ppm within 30 s. Hydrogen sensitivity is ascribed to the increase of a current gain in two transistor model of the device due to the change in palladium work-function.
Keywords :
Hydrogen; Impedance; MOSFETs; Ohmic contacts; Palladium; Schottky diodes; Silicon; Switches; Switching circuits; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25658
Filename :
1483402
Link To Document :
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