Ballistic transport in Schottky barrier carbon nanotube FETs

Simulation of Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs) is presented to yield the electrostatic potential, carrier concentration and current within the device. The simulator is based on a self-consistent solution of Poisson´s equation and the carrier transport equation. The finite element method is used for solving Poisson´s equation while the non-equilibrium Green´s function formalism is used to model the carrier transport. The developed simulator is used to investigate the effects of device parameters on device performance.