• DocumentCode
    1089221
  • Title

    18.5 GHz bandwidth monolithic preamplifier using AlGaAs/GaAs ballistic collection transistors

  • Author

    Sano, Eiichi ; Nakamura, Mitsutoshi ; Imai, Yuki ; Matsuoka, Yasutaka ; Ishibashi, Takayuki

  • Author_Institution
    NTT LSI Lab., Atsugi, Japan
  • Volume
    27
  • Issue
    22
  • fYear
    1991
  • Firstpage
    2093
  • Lastpage
    2094
  • Abstract
    A circuit technique for improving the transimpedance flatness and output matching characteristics in a preamplifier is proposed. An 18.5 GHz bandwidth monolithic preamplifier with a transimpedance of 52 dB Omega has been fabricated with AlGaAs/GaAs ballistic collection transistors.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; impedance matching; microwave amplifiers; optical communication equipment; preamplifiers; wideband amplifiers; 18.5 GHz; AlGaAs-GaAs; BCT; ballistic collection transistors; monolithic preamplifier; output matching characteristics; transimpedance flatness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911296
  • Filename
    133010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1089221