Title :
Burnout studies of X-band radar negative resistance transistor low noise amplifiers
Author :
Paul, D.K. ; Gardner, Peter
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
3/26/1992 12:00:00 AM
Abstract :
GaAs FETs and HEMTs can be configured to give low noise, negative resistance microwave amplification. Such low noise amplifiers have the advantage of an inherent bypass path after device burnout. This feature is potentially useful in radar receiver applications. Test results for prototype LNAs are described, showing burnout energies comparable to those of conventional transmission mode amplifiers using similar devices. Bypass path losses after burnout are around 4 dB, approximately 20 dB less than for a failed transmission mode amplifier.
Keywords :
field effect transistors; high electron mobility transistors; microwave amplifiers; negative resistance; radar receivers; semiconductor device testing; solid-state microwave circuits; solid-state microwave devices; FETs; GaAs; HEMTs; X-band radar negative resistance transistor low noise amplifiers; burnout energies; burnout testing; inherent bypass path; negative resistance microwave amplification; radar receiver applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920387
