DocumentCode :
1089560
Title :
Canyon lithography
Author :
Dolan, G.J. ; Fulton, T.A.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
4
Issue :
6
fYear :
1983
fDate :
6/1/1983 12:00:00 AM
Firstpage :
178
Lastpage :
180
Abstract :
We describe a simple resist structure for implementing brushfire lithography (BFL) in electron-beam writing. The outlines of the pattern features are written as narrow deep openings formed in a single layer of positive electron resist. An oblique evaporation of a metal film onto the surface yields outlined electrically isolated metal copies of the features. These can be toned by selective electrically controlled etching. Transfer of the metal pattern to the underlying resist completes the structure.
Keywords :
Centralized control; Chromium; Dielectrics and electrical insulation; Electrons; Etching; Lithography; Proximity effect; Resists; Substrates; Writing;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1983.25696
Filename :
1483440
Link To Document :
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