Title :
Highly efficient GaAs power MESFETs with n+-asymmetrical LDD structure
Author :
Yanagihara, M. ; Ota, Yoshiharu ; Nishii, Kento ; Ishikawa, O. ; Tamura, A.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
3/26/1992 12:00:00 AM
Abstract :
Highly efficient GaAs power MESFETs with n+-asymmetrical lightly doped drain (LDD) structure and refractory gate metal have been developed. The excellent RF performance of 32.5 dBm output power and 70% power-added efficiency at 950 MHz, Vds=4.7 V and 21 dBm input power was typically obtained.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; 70 percent; 950 MHz; GaAs; RF performance; UHF; lightly doped drain; n +-asymmetrical LDD structure; power MESFETs; power-added efficiency; refractory gate metal;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920433
