• DocumentCode
    1089906
  • Title

    Vertical-cavity surface-emitting lasers with lateral carrier confinement

  • Author

    Lofgreen, D.D. ; Chang, Y.-C. ; Coldren, L.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA
  • Volume
    43
  • Issue
    3
  • fYear
    2007
  • Firstpage
    163
  • Lastpage
    164
  • Abstract
    A novel method to reduce threshold currents in vertical-cavity surface-emitting lasers (VCSELs) is proposed. By using selective quantum well intermixing, lateral heterobarriers are created that prevent carriers from diffusing away from the optical modes. Our devices show 40% reduction of threshold currents with the implementation of lateral carrier confinement
  • Keywords
    laser modes; quantum well lasers; surface emitting lasers; VCSEL; lateral carrier confinement; lateral heterobarriers; selective quantum well intermixing; threshold currents; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    4087792