Title :
Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam
Author :
Tsang, W.T. ; Ditzenberger, J.A. ; Olsson, N.A.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
8/1/1983 12:00:00 AM
Abstract :
We report the use of an As2(instead of As4) beam during molecular beam epitaxial (MBE) growth of GaxAlyIn1-x-yAs layers, lattice-matched to InP substrate. We also show that use of the As2beam improves the room-temperature photoluminescence intensities of both In0.53Ga0.47As and Ga0.39Al0.08In0.53As epilayers with more significant improvement for the latter. The substrate temperature employed was ∼ 580°C for both.
Keywords :
Artificial intelligence; Avalanche photodiodes; Gallium arsenide; Indium phosphide; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Photoluminescence; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25731
