• DocumentCode
    109028
  • Title

    Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions

  • Author

    An Chen

  • Author_Institution
    GLOBALFOUNDIRES, Santa Clara, CA, USA
  • Volume
    36
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    138
  • Lastpage
    140
  • Abstract
    The stochastic switching mechanism and intrinsic variability of resistive random access memory (RRAM) present severe challenges for memory applications, which, however, may be utilized to implement the physical unclonable function (PUF) for hardware security. A PUF based on RRAM resistance variability is proposed in this letter. Unlike PUFs based on manufacturing variation, this proposal exploits an intrinsic variability in physical mechanisms with reconfigurability. Key characteristics of the PUF design are assessed by simulation using measured RRAM properties and device model. Truly random variation of RRAM resistance is critical for PUF uniqueness (or unclonability). The reliability (or robustness) of the proposed PUF is affected by temperature and voltage dependence of RRAM resistance as well as retention characteristics. Large separation between inter-chip and intra-chip Hamming distance as the measure of uniqueness and reliability confirms the feasibility of the PUF proposal.
  • Keywords
    integrated circuit modelling; integrated circuit reliability; resistive RAM; PUF design; PUF reliability; RRAM resistance variability; device model; hardware security; inter-chip Hamming distance; intra-chip Hamming distance; intrinsic variability; manufacturing variation; measured RRAM properties; reconfigurable PUF; reconfigurable physical unclonable functions; resistive random access memory variability; retention characteristics; stochastic switching mechanism; voltage dependence; Electrical resistance measurement; High definition video; Reliability; Resistance; Security; Switches; Temperature measurement; PUF; RRAM; security; variability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2385870
  • Filename
    6998001