Title :
Experimental performance of the buried-channel acoustic charge transport device
Author :
Hoskins, M.J. ; Bogus, E.G. ; Hunsinger, B.J.
Author_Institution :
University of Illinois, Urbana, IL
fDate :
11/1/1983 12:00:00 AM
Abstract :
High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.
Keywords :
Acoustic devices; Acoustic measurements; Acoustic waves; Charge coupled devices; Clocks; Electrons; Frequency measurement; Gallium arsenide; Surface acoustic wave devices; Surface acoustic waves;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25778
