Title :
Experimental evidence of broad-band negative resistance characteristics of TRAPATT devices
Author :
Kumar, K. ; Foulds, K.W.H.
Author_Institution :
Nanyang Technological Institute, Singapore
fDate :
11/1/1983 12:00:00 AM
Abstract :
Experiments on-deeply diffused Si TRAPATT diodes have given direct evidence of small-signal negative resistance at both VHF (30-80 MHz) and at the design TRAPATT frequency of 2 GHz.
Keywords :
Circuit optimization; Coaxial components; Diodes; Frequency; Oscillators; Pulse modulation; Reflection; Tuning; VHF circuits; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1983.25779
