Title :
Low noise, high efficiency GaAs IMPATT diodes at 30 GHz
Author :
Kearney, M.J. ; Couch, N.R. ; Stephens, J.S. ; Smith, Roy S.
Author_Institution :
GEC, Marconi Ltd., Wembley, UK
fDate :
4/9/1992 12:00:00 AM
Abstract :
Low noise, very high efficiency IMPATT diodes provide an attractive alternative to Gunn diodes for many millimetre-wave applications. GaAs hi-lo single-drift IMPATT diodes are demonstrated. The diodes are fabricated using molecular beam epitaxy and (at approximately 30 GHz) exhibit exceptional efficiencies (>20%), very low FM noise (-88 dBc/Hz at 100 kHz off-carrier) and simultaneous CW power levels in excess of 300 mW.
Keywords :
III-V semiconductors; IMPATT diodes; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 30 GHz; CW power levels; FM noise; IMPATT diodes; hi-lo single-drift devices; millimetre-wave applications; molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920447
