DocumentCode :
1090590
Title :
Impact ionization in Ga1-xAlxSb: An alternative interpretation
Author :
Kasemset, Dumrong
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA, USA
Volume :
17
Issue :
9
fYear :
1981
fDate :
9/1/1981 12:00:00 AM
Firstpage :
1595
Lastpage :
1597
Abstract :
The existence of the recently proposed resonance impact ionization process in gallium aluminum antimonide is questioned. An alternative interpretation of the data originally used to support the claim for a resonant process is presented which invokes only conventional, well-established processes.
Keywords :
Crystalline materials; Crystals; Distribution functions; Impact ionization; Materials science and technology; Nonlinear optics; Optical films; Optical mixing; Optimized production technology; Resonance;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1981.1071327
Filename :
1071327
Link To Document :
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