A proposed high-frequency high-power silicon-silicide multilayered device

A new, integrated device, comprised of a series of metal and semiconductor films, is proposed for use as a high-frequency high-power source. The new metal-semiconductor device provides the excess carrier generation and the drift phase angle delay required to accomplish the negative resistance. The metal acts as a reservoir to collect the excess generated carriers from both sides of the semiconductor and to isolate the performance of each element of the integrated device. Following simple scaling rules, the area of an integrated device having n elements is n times larger than the area of each element; and the power output is about n²times the output of a single element at the same operation frequency, if the heat dissipation is not a limiting factor. The device can be fabricated-by using the silicon-silicide epitaxial process with MBE.