DocumentCode :
1090872
Title :
New method for determining emitter resistance
Author :
Wijburg, R.C.M. ; Klootwijk, J.H.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Volume :
28
Issue :
8
fYear :
1992
fDate :
4/9/1992 12:00:00 AM
Firstpage :
733
Lastpage :
734
Abstract :
A new method is described to determine the emitter resistance of bipolar transistors. With this method the emitter resistance can directly be extracted from the Gummel plot. It is based on the fact that the base current is zero at a certain collector-base voltage due to impact ionisation.
Keywords :
bipolar transistors; electric resistance; impact ionisation; semiconductor device models; Gummel plot; base current; bipolar transistors; collector-base voltage; emitter resistance; impact ionisation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920464
Filename :
133103
Link To Document :
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