DocumentCode
1090945
Title
Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides
Author
Joshi, A.B. ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
28
Issue
8
fYear
1992
fDate
4/9/1992 12:00:00 AM
Firstpage
744
Lastpage
746
Abstract
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.
Keywords
capacitors; electron traps; hole traps; interface electron states; metal-insulator-semiconductor devices; radiation effects; semiconductor-insulator boundaries; 10 micron; MOS capacitors; gate oxide thickness; interface state generation; neutral trap generation; radiation exposure; radiation induced damage; radiation induced positive charge; ultrathin gate oxides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920471
Filename
133110
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