DocumentCode :
1091075
Title :
Bipolar-mode Schottky contact and applications to high-speed diodes
Author :
Amemiya, Yoshihito ; Mizushima, Yoshihiko
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume :
31
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
35
Lastpage :
42
Abstract :
A Schottky contact operation combined with minority-carrier transport, a concept of bipolar-mode Schottky contacts, is proposed. There are two bipolar-mode Schottky contacts. One acts as a minority-carrier injector causing conductivity modulation without excessive carrier accumulation, while the other operates as an ideal ohmic contact to conduct minority carriers without accumulation. Applicationally, these contacts are utilized to improve conventional Schottky diodes and p-n diodes, respectively and a high-voltage Schottky diode (BSBD) and a fast-recovery p-n diode (quasi-LLD) can then be realized.
Keywords :
Conductivity; Detectors; Microwave devices; Ohmic contacts; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor diodes; Telegraphy; Telephony;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21471
Filename :
1483756
Link To Document :
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