Title :
Bipolar-mode Schottky contact and applications to high-speed diodes
Author :
Amemiya, Yoshihito ; Mizushima, Yoshihiko
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
fDate :
1/1/1984 12:00:00 AM
Abstract :
A Schottky contact operation combined with minority-carrier transport, a concept of bipolar-mode Schottky contacts, is proposed. There are two bipolar-mode Schottky contacts. One acts as a minority-carrier injector causing conductivity modulation without excessive carrier accumulation, while the other operates as an ideal ohmic contact to conduct minority carriers without accumulation. Applicationally, these contacts are utilized to improve conventional Schottky diodes and p-n diodes, respectively and a high-voltage Schottky diode (BSBD) and a fast-recovery p-n diode (quasi-LLD) can then be realized.
Keywords :
Conductivity; Detectors; Microwave devices; Ohmic contacts; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor diodes; Telegraphy; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21471