DocumentCode :
1091481
Title :
A parametric short-channel MOS transistor model for subthreshold and strong inversion current
Author :
Grotjohn, Tim ; Hoefflinger, Bernd
Author_Institution :
Purdue University, West Lafayette, IN
Volume :
31
Issue :
2
fYear :
1984
fDate :
2/1/1984 12:00:00 AM
Firstpage :
234
Lastpage :
246
Abstract :
A parametric model with short-channel capabilities is presented for MOS transistors. It covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.
Keywords :
Analog circuits; Capacitance; Circuit simulation; Immune system; MOSFETs; Permittivity; Subthreshold current; Surface resistance; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21507
Filename :
1483792
Link To Document :
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