Title :
A parametric short-channel MOS transistor model for subthreshold and strong inversion current
Author :
Grotjohn, Tim ; Hoefflinger, Bernd
Author_Institution :
Purdue University, West Lafayette, IN
fDate :
2/1/1984 12:00:00 AM
Abstract :
A parametric model with short-channel capabilities is presented for MOS transistors. It covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.
Keywords :
Analog circuits; Capacitance; Circuit simulation; Immune system; MOSFETs; Permittivity; Subthreshold current; Surface resistance; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21507