Title :
High-Power High-Brightness Operation of a 2.25-
m (AlGaIn)(AsSb)-Based Barrier-Pumped Vertical-External-Cavity Surface-Emitting Laser
Author :
Rösener, B. ; Schulz, N. ; Rattunde, M. ; Manz, C. ; Köhler, K. ; Wagner, J.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkur- perphys., Freiburg
fDate :
4/1/2008 12:00:00 AM
Abstract :
We report on the output power performance and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser operating at 2.25 mum. The use of a SiC heatspreader and a precise control of the temperature-dependent modal gain allowed for improved high-power operation with a maximum continuous-wave output power of 3.4W at 10degC heatsink temperature. At 0degC, a maximum output power >2.9 W was observed and still more than 1.6 W were obtained at room temperature. Using second-order moments for the definition of the beam diameter, a beam propagation factor M2~5 of was measured at maximum output power. Optimizing the beam quality of the laser resulted in a beam profile close to the Gaussian TEM00 mode (M2 ap 1.5) and still more than 2-W output power at 0degC.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical pumping; surface emitting lasers; AlGaInAsSb; Gaussian TEM00 mode; beam propagation factor; beam quality; continuous-wave output power; modal gain; optical pumping; power 3.4 W; room temperature; second-order moments; temperature -10 degC; temperature 0 degC; vertical-external-cavity surface-emitting laser; wavelength 2.25 mum; Gas lasers; Laser beams; Laser excitation; Optical pumping; Performance analysis; Power generation; Power lasers; Pump lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Beam quality; GaInAsSb; infrared; optically pumped semiconductor disk laser (OPSDL); vertical- external-cavity surface-emitting laser (VECSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.918874