• DocumentCode
    1092154
  • Title

    High-efficiency GaAs solar cells

  • Author

    Knechtli, Ronald C. ; Loo, Robert Y. ; Kamath, G. Sanjiv

  • Author_Institution
    Hughes Research Laboratories, Malibu, CA
  • Volume
    31
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    577
  • Lastpage
    588
  • Abstract
    An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space applications. As a milestone toward the practical application of AlGaAs-GaAs solar cells in space systems, a brief account is provided on the development status of small experimental AlGaAs-GaAs solar-cell panels for specific space flights.
  • Keywords
    Electrons; Fabrication; Gallium arsenide; Neutrons; Optical losses; Photonic band gap; Photovoltaic cells; Protons; Silicon; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21572
  • Filename
    1483857