Title :
Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells
Author :
Wilson, John W. ; Stock, L.V.
Author_Institution :
NASA Langley Research Center, Hampton, VA
fDate :
5/1/1984 12:00:00 AM
Abstract :
It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.
Keywords :
Annealing; Electrons; Gallium arsenide; Performance evaluation; Photovoltaic cells; Protection; Protons; Qualifications; Test facilities; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21579