Title :
Characterization of the First Prototypes of Silicon Photomultiplier Fabricated at ITC-irst
Author :
Piemonte, Claudio ; Battiston, Roberto ; Boscardin, Maurizio ; Betta, Gian-Franco Dalla ; Del Guerra, Alberto ; Dinu, Nicoleta ; Pozza, Alberto ; Zorzi, Nicola
Author_Institution :
Divisione Microsistemi, ITC-irst, Povo Di Trento
Abstract :
This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device
Keywords :
avalanche photodiodes; optical crosstalk; photomultipliers; silicon radiation detectors; GM-APD; Geiger-Mode Avalanche Photodiodes; ITC-irst; SiPM; after-pulse rates; bias voltage; breakdown voltage; current level; dark condition; dark count rate; electrical characterization; first prototypes; forward IV measurements; functional measurements; optical cross-talk; photodetectors; quenching resistance value; reverse measurements; silicon photomultiplier; static measurements; Avalanche photodiodes; Electrical resistance measurement; Optical crosstalk; Performance evaluation; Photomultipliers; Prototypes; Signal analysis; Silicon; Testing; Voltage; Geiger-mode avalanche photodiode; photodetectors; silicon photomultiplier;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.887115