DocumentCode :
1093290
Title :
A new AC measurement technique to accurately determine MOSFET constants
Author :
Thoma, Morgan J. ; Westgate, Charles R.
Author_Institution :
The Johns Hopkins University, Baltimore, MD
Volume :
31
Issue :
9
fYear :
1984
fDate :
9/1/1984 12:00:00 AM
Firstpage :
1113
Lastpage :
1116
Abstract :
An ac measurement technique to accurately determine 
, the mobility degradation coefficient Θ, and the drain-source resistance 
is presented, and results are given for a PMOS transistor array with constant width (40 µm) and variable channel lengths (ranging from 0.8 to 4 µm). Because the proposed method does not require significant data reduction, it offers a number of advantages over previously published techniques. In addition, the method yields a refined value for the threshold voltage by curve fitting the measured and computed gate characteristics with VT as a parameter. This procedure reduces the sensitivity of the technique to small errors made in a threshold-voltage measurement.
, the mobility degradation coefficient Θ, and the drain-source resistance is presented, and results are given for a PMOS transistor array with constant width (40 µm) and variable channel lengths (ranging from 0.8 to 4 µm). Because the proposed method does not require significant data reduction, it offers a number of advantages over previously published techniques. In addition, the method yields a refined value for the threshold voltage by curve fitting the measured and computed gate characteristics with VKeywords :
Curve fitting; Degradation; MOSFET circuits; Measurement techniques; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21673
Filename :
1483958
Link To Document :
