DocumentCode
109358
Title
thin ice
Author
Nosaeva, K. ; Weimann, N. ; Rudolph, M. ; John, W. ; Krueger, O. ; Heinrich, W.
Volume
51
Issue
13
fYear
2015
fDate
6 25 2015
Firstpage
959
Lastpage
959
Abstract
In this article, researchers from FBH Germany present an InP DHBT design incorporating a thin-film diamond layer that can cut the thermal resistance of a DHBT by around 75%. Diamond films provide a way to more than double the power output achievable with terahertz gap transistors. The films are used to provide better heat management in InP DHBTs for more reliable and higher power operation, using a process compatible with existing transistor production technologies.
Keywords
diamond; heterojunction bipolar transistors; semiconductor device packaging; submillimetre wave transistors; thermal management (packaging); thin films; C; DHBT design; InP; diamond film; double heterojunction bipolar transistor; terahertz gap transistor; thermal resistance; thin film diamond layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2015.1943
Filename
7130801
Link To Document