Title :
Application of heterojunction FET to power amplifier for cellular telephone
Author :
Ota, Yoshiharu ; Adachi, C. ; Takehara, Hironari ; Yanagihara, M. ; Fujimoto, Hiroshi ; Inoue, Ken
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka
fDate :
5/26/1994 12:00:00 AM
Abstract :
The high power properties of heterojunction FETs (H-FET have been investigated. The H-FETs are fabricated by using a strained AlGaAs/GaInAs/GaAs/AlGaAs selectively-doped double heterojunction structure. As compared with GaAs MESFETs, the H-FETs show 1.5 dB higher saturation power and 8% higher power-added efficiency than those of the MESFETs, at 950 MHz and 4.7 V. The H-FETs are more suitable for the power amplifier of cellular telephones
Keywords :
III-V semiconductors; aluminium compounds; cellular radio; field effect integrated circuits; gallium arsenide; indium compounds; power amplifiers; power integrated circuits; 4.7 V; 8 percent; 950 MHz; AlGaAs-GaInAs-GaAs-AlGaAs; AlGaAs/GaInAs/GaAs/AlGaAs; H-FETs; cellular telephone; heterojunction FET; high power properties; power amplifier; power-added efficiency; saturation power; strained selectively-doped double heterojunction structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940571
