DocumentCode :
1094450
Title :
CASFET: A MOSFET-JFET cascode device with ultralow gate capacitance
Author :
Jackel, Lawrence D. ; Swartz, Robert G. ; Howard, Richard E. ; Ko, Ping-Keung ; Grabbe, Paul
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1752
Lastpage :
1758
Abstract :
A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration. The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.
Keywords :
Capacitance; Electrodes; Electrons; FETs; Fabrication; Lithography; MOSFET circuits; Metallization; Resists; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21783
Filename :
1484068
Link To Document :
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