• DocumentCode
    1094450
  • Title

    CASFET: A MOSFET-JFET cascode device with ultralow gate capacitance

  • Author

    Jackel, Lawrence D. ; Swartz, Robert G. ; Howard, Richard E. ; Ko, Ping-Keung ; Grabbe, Paul

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ
  • Volume
    31
  • Issue
    12
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    1752
  • Lastpage
    1758
  • Abstract
    A field-effect transistor is described that combines a short-gate MOSFET with a long-channel JFET in a cascode configuration. The composite device, a CASFET, can have a very low input capacitance due to the short gate of the MOSFET combined with the reduced Miller capacitance of the cascode. The long channel of the JFET insures that the CASFET has high output resistance. This paper discusses CASFET fabrication, performance, and modeling.
  • Keywords
    Capacitance; Electrodes; Electrons; FETs; Fabrication; Lithography; MOSFET circuits; Metallization; Resists; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21783
  • Filename
    1484068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1094450