Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET

Author

Hu, Vita Pi-Ho ; Ming-Long Fan ; Pin Su ; Ching-Te Chuang

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3596

Lastpage

3600

Abstract

We present a comparative leakage analysis of germanium-on-insulator (GeOI) FinFET and germanium on bulk substrate FinFET (Ge bulk FinFET) at device and circuit levels. Band-to-band tunneling (BTBT) leakage-induced bipolar effect is found to result in an amplified BTBT leakage for GeOI FinFET. Device and circuit designs to mitigate the amplified BTBT leakage of GeOI FinFETs are suggested. The effectiveness of various high threshold voltage technology options including increasing channel doping, increasing gate length and drain-side underlap for leakage reduction is analyzed.

Keywords

MOSFET; elemental semiconductors; germanium; leakage currents; tunnelling; BTBT leakage-induced bipolar effect; Ge; amplified BTBT leakage mitigation; band-to-band tunneling; bulk FinFET; channel doping; circuit designs; circuit levels; comparative leakage analysis; drain-side underlap; gate length; germanium-on-bulk substrate FinFET; germanium-on-insulator; high threshold voltage technology; leakage current reduction analysis; Doping; Educational institutions; FinFETs; Germanium; Leakage currents; Logic gates; Band-to-band tunneling (BTBT) leakage; FinFET; germanium; germanium-on-insulator (GeOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2278032

Filename

6588890