GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer

Author

Shoou-Jinn Chang ; Lu, Li ; Yu-Yao Lin ; Shuguang Li

Author_Institution

Coll. of Sci., China Univ. of Pet. (East China), Qingdao, China

Volume

9

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

910

Lastpage

914

Abstract

An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; buffer layers; compressive strength; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; tensile strength; wide band gap semiconductors; AlGaN-GaN; GaN-based light-emitting diodes; LED output power; compressive strain; forward voltage; in-plane biaxial stresses; in-plane tensile strain; microRaman spectra measurement; quantum well layers; strain compensation buffer layer; Aluminum gallium nitride; Art; Educational institutions; Gallium nitride; Light emitting diodes; Quantum well devices; Strain; Droop; Raman scattering; light-emitting diode (LED); strain compensation;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2269477

Filename

6542634