DocumentCode

1095005

Title

IIA-4 A self-aligned gate process for IC´s based on modulation-doped (Al, Ga)As/GaAs FET´s

Author

Abrokwah, J.K. ; Shur, Michael S.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1963

Lastpage

1963

Keywords

Electrons; Epitaxial layers; FETs; Fabrication; Gallium arsenide; HEMTs; Ion implantation; MODFET circuits; MODFET integrated circuits; Ring oscillators;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21829

Filename

1484114