Title :
IIA-5 accumulation-mode GaAs MIS-like FET self-aligned by ion implantation
Author :
Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Hashizume, Nobuya
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; Current measurement; Design optimization; Electron devices; FETs; Gallium arsenide; Ion implantation; Laboratories; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21831
