Title :
IIA-7 a GaAs gate heterojunction FET
Author :
Solomon, Paul M. ; Knoedler, C.M. ; Wright, S.L.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Annealing; FETs; Fabrication; Gallium arsenide; Heterojunctions; Implants; Molecular beam epitaxial growth; Resists; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21833
