Title :
Post-irradiation effects in a rad-hard technology
Author :
Chabrerie, Christian ; Musseau, Olivier ; Flament, Olivier ; Leray, Jean-Luc ; Boudenot, Jean-Claude ; Shipman, Benoit ; Callewaert, Heme
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1996 12:00:00 AM
Abstract :
We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level)
Keywords :
CMOS integrated circuits; annealing; radiation effects; radiation hardening (electronics); CMOS radiation-hard technology; charge detrapping; experimental procedure dependence; gate oxide; isochronal annealing; isothermal annealing; physical properties; post-irradiation effects; radiation effects; Annealing; CMOS technology; Degradation; Isothermal processes; MOSFETs; Radiation hardening; Silicon on insulator technology; Temperature; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
