DocumentCode

1095231

Title

IIIB-2 mean time to failure model for hot-carrier-induced degradation

Author

Chen, K.L. ; Scott, David B.

Volume

31

Issue

12

fYear

1984

fDate

12/1/1984 12:00:00 AM

Firstpage

1970

Lastpage

1971

Keywords

Ballistic transport; Degradation; Gallium arsenide; Hot carriers; MOSFETs; Pulse measurements; Silicon; Stress; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1984.21848

Filename

1484133