Title :
Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer
Author :
McMorrow, Dale ; Weatherford, Todd R. ; Knudson, Alvin R. ; Buchner, Steve ; Melinger, Joseph S. ; Tran, Lan Hu ; Campbell, A.B. ; Marshall, Paul W. ; Dale, Cheryl J. ; Peczalski, Andrej ; Baier, Steve
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; ion beam effects; junction gate field effect transistors; laser beam effects; GaAs; HIGFETs; charge collection efficiencies; charge enhancement processes; heterojunction-insulated-gate FETs; ion irradiation; laser irradiation; low-temperature grown buffer; Buffer layers; Circuits; Computer errors; Current measurement; Extraterrestrial measurements; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs;
Journal_Title :
Nuclear Science, IEEE Transactions on
