Title :
VA-1 AlGaAs/GaAs heterojunction bipolar transistors with cutoff frequencies above 25 GHz
Author :
Sugeta, T. ; Ito, H. ; Ishibashi, Takayuki
fDate :
12/1/1984 12:00:00 AM
Keywords :
Capacitance; Current measurement; Cutoff frequency; Electrons; Gallium arsenide; Gold; Heterojunction bipolar transistors; Impact ionization; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21870
