Title :
VA-3 emitter-base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistors
Author :
Yoshida, J. ; Kurata, M. ; Obara, M. ; Morizuka, K. ; Hojo, A.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Bipolar transistors; Charge carrier lifetime; Cutoff frequency; Energy states; Gallium arsenide; Heterojunction bipolar transistors; Ion implantation; Photonic band gap; Research and development; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21873
