Title :
VA-7 amorphous silicon as a tunneling barrier
Author :
Yang, E.S. ; Yang, D.K. ; Yang, Guo S.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Amorphous silicon; Annealing; CMOS process; Circuits; Contracts; Schottky barriers; Temperature; Tunneling; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21878
