DocumentCode :
1095605
Title :
VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications
Author :
Banerjee, Sanjay K. ; Elahy, M. ; Shichijo, H. ; Pollack, G.P. ; Richardson, W.F. ; Malhi, S.D.S. ; Shah, Asmi H. ; Chatterjee, P.K. ; Lam, H.W. ; Womack, R.H.
Volume :
31
Issue :
12
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
1983
Lastpage :
1983
Keywords :
Doping; Fabrication; Grain boundaries; Implants; Instruments; Leakage current; MOSFET circuits; Passivation; Silicon; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21881
Filename :
1484166
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095605
