Title :
VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide
Author :
Cheng, C.L. ; Lalevic, B. ; Chang, T.Y. ; Coldren, Larry A.
fDate :
12/1/1984 12:00:00 AM
Keywords :
Buffer layers; Electron mobility; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; MESFETs; Microwave FETs; Silicon; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21886
