Title :
Fast optoelectronic crosspoint electrical switching of GaAs photoconductors
Author :
Lam, D.K.W. ; MacDonald, R.I.
Author_Institution :
Communications Research Centre, Ottawa, Ontario, Canada
fDate :
1/1/1984 12:00:00 AM
Abstract :
The optoelectronic crosspoint electrical switching characteristics of GaAs photoconductors were investigated by using a variable time-delay method. Rise and fall time as short as 0.6 and 1.1 ns, respectively, were observed at the very low operating bias of 3-4 V.
Keywords :
Communication switching; Delay; Gallium arsenide; Monitoring; Optical pulse generation; Optical pulses; Oscilloscopes; Photoconductivity; Switches; Switching circuits;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1984.25808
