DocumentCode :
1095867
Title :
Electroabsorption Al0.48In0.52As p-i-n avalanche photodiodes grown by molecular beam epitaxy
Author :
Capasso, F. ; Alavi, K. ; Cho, A.Y. ; Hutchinson, A.L.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
5
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
16
Lastpage :
17
Abstract :
The operation of the first Al0.48In0.52As p-i-n avalanche photodiode is reported. The i layer has a background doping ≲1014/ cm3and the diodes have breakdown voltages in excess of -80 V. A strong enhancement of the photoresponse accompanied by avalanche gain at wavelengths near and beyond the band gap is observed, due to the Franz-Keldysh effect. At short wavelengths, an avalanche gain of 50 was measured. A detailed study of different etches to achieve optimum taper of the mesas was also made.
Keywords :
Avalanche photodiodes; Doping; Etching; Indium phosphide; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Photonic band gap; Schottky diodes; Wavelength measurement;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25815
Filename :
1484191
Link To Document :
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