DocumentCode :
1095884
Title :
Double-implanted GaAs complementary JFET´s
Author :
Zuleeg, R. ; Notthoff, J.K. ; Troeger, G.L.
Author_Institution :
McDonnell Douglas Microelectronics Center, Huntington Beach, CA
Volume :
5
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
21
Lastpage :
23
Abstract :
The fabrication and performance characteristics of double-implanted GaAs complementary junction field-effect transistors (JFET´s) suitable for low-power digital integrated circuit applications are described. Effective mobilities for the n-channel enhancement-mode JFET are 3500 cm2/V.s and for the p-channel 300 cm2/V.s. Experimental results of an ultra-low-power static RAM are presented.
Keywords :
Delay effects; Dielectrics; FETs; Gallium arsenide; Implants; MESFETs; Power dissipation; Random access memory; Read-write memory; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1984.25817
Filename :
1484193
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1095884
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